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 2N4401
Preferred Device
General Purpose Transistors
NPN Silicon
Features http://onsemi.com
* Pb-Free Packages are Available*
COLLECTOR 3
MAXIMUM RATINGS
Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg -55 to +150 W mW/C C mW mW/C 1 2 3 Value 40 60 6.0 600 Unit Vdc Vdc Vdc mAdc
2 BASE 1 EMITTER
MARKING DIAGRAM
2N 4401 YWW
TO-92 CASE 29 STYLE 1
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
Y WW
= Year = Work Week
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
Preferred devices are recommended choices for future use and best overall value.
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2004
1
June, 2004 - Rev. 1
Publication Order Number: 2N4401/D
2N4401
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Base-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VBE = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) td tr ts tf - - - - 15 20 225 30 ns ns ns ns fT Ccb Ceb hie hre hfe hoe 250 - - 1.0 0.1 40 1.0 - 6.5 30 15 8.0 500 30 MHz pF pF k ohms X 10-4 - mmhos hFE 20 40 80 100 40 VCE(sat) VBE(sat) - - 0.75 - - - - 300 - 0.4 0.75 0.95 1.2 Vdc Vdc - V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX 40 60 6.0 - - - - - 0.1 0.1 Vdc Vdc Vdc mAdc mAdc Symbol Min Max Unit
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
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2N4401
ORDERING INFORMATION
Device 2N4401 2N4401RLRA 2N4401RLRAG 2N4401RLRM 2N4401RLRP 2N4401RLRPG 2N4401ZL1 Package TO-92 TO-92 TO-92 (Pb-Free) TO-92 TO-92 TO-92 (Pb-Free) TO-92 Shipping 5,000 Units / Box 2,000 / Tape & Reel 2,000 / Tape & Reel 2,000 / Ammo Pack 2,000 / Ammo Pack 2,000 / Ammo Pack 2,000 / Ammo Pack
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V +16 V 0 -2.0 V 1.0 to 100 ms, DUTY CYCLE 2.0% 1.0 kW < 2.0 ns 200 W +16 V 0 CS* < 10 pF -14 V < 20 ns 1.0 to 100 ms, DUTY CYCLE 2.0% 1.0 kW +30 V 200 W
CS* < 10 pF
-4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn-On Time
Figure 2. Turn-Off Time
TRANSIENT CHARACTERISTICS
25C 30 20 CAPACITANCE (pF) Q, CHARGE (nC) Cobo 10 7.0 5.0 Ccb 3.0 2.0 0.1 100C 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 QA 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 QT
VCC = 30 V IC/IB = 10
0.2 0.3 0.5
1.0 2.0 3.0 5.0 10 REVERSE VOLTAGE (VOLTS)
20 30
50
Figure 3. Capacitances
Figure 4. Charge Data
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2N4401
100 70 50 t, TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 IC/IB = 10 100 70 50 30 20 tf tr VCC = 30 V IC/IB = 10
10 7.0 5.0 10 20 30 50 70 100 200 300 500
10 7.0 5.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn-On Time
Figure 6. Rise and Fall Times
300 200 t s, STORAGE TIME (ns)
ts = ts - 1/8 tf IB1 = IB2 IC/IB = 10 to 20 t f , FALL TIME (ns)
100 70 50 30 20 IC/IB = 10 IC/IB = 20 VCC = 30 V IB1 = IB2
100 70 50
10 7.0
30
10
20
30
50
70
100
200
300
500
5.0
10
20
30
50
70
100
200
300
500
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25C; Bandwidth = 1.0 Hz
10 8.0 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 150 W IC = 500 mA, RS = 200 W IC = 100 mA, RS = 2.0 kW IC = 50 mA, RS = 4.0 kW RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 mA IC = 100 mA IC = 500 mA IC = 1.0 mA
6.0
6.0
4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f, FREQUENCY (kHz)
4.0 2.0 0
10
20
50
100
50
100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k RS, SOURCE RESISTANCE (OHMS)
50 k 100 k
Figure 9. Frequency Effects
Figure 10. Source Resistance Effects
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2N4401
h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C
This group of graphs illustrates the relationship between hfe and other "h" parameters for this series of transistors. To obtain these curves, a high-gain and a low-gain unit were
selected from the 2N4401 lines, and the same units were used to develop the correspondingly numbered curves on each graph.
300 hie , INPUT IMPEDANCE (OHMS) 200 hfe , CURRENT GAIN
50 k 20 k 10 k 5.0 k 2N4401 UNIT 1 2N4401 UNIT 2
100 70 50 30 20 2N4401 UNIT 1 2N4401 UNIT 2
2.0 k 1.0 k 500 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
Figure 12. Input Impedance
h re , VOLTAGE FEEDBACK RATIO (X 10-4 )
10 hoe, OUTPUT ADMITTANCE (m mhos) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
100 50
2N4401 UNIT 1 2N4401 UNIT 2
20 10 5.0 2.0 1.0 2N4401 UNIT 1 2N4401 UNIT 2
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio
Figure 14. Output Admittance
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2N4401
STATIC CHARACTERISTICS
3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 1.0 25C 0.7 0.5 0.3 0.2 0.1 -55 C
0.2
0.3
0.5
0.7
1.0
2.0
3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA)
30
50
70
100
200
300
500
Figure 15. DC Current Gain
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 0.8 TJ = 25C
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0 0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0 IB, BASE CURRENT (mA)
2.0
3.0
5.0 7.0
10
20
30
50
Figure 16. Collector Saturation Region
1.0 TJ = 25C 0.8 VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C)
+0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 qVB for VBE 0.1 0.2 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500 qVC for VCE(sat)
0.6
VBE @ VCE = 10 V
0.4
0.2 0
VCE(sat) @ IC/IB = 10
0.1 0.2
0.5
50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)
100 200
500
Figure 17. "On" Voltages
Figure 18. Temperature Coefficients
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2N4401
PACKAGE DIMENSIONS TO-92 TO-226AA CASE 29-11 ISSUE AL
A R P L
SEATING PLANE
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 ---
K
XX G H V
1
D J C SECTION X-X N N
DIM A B C D G H J K L N P R V
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
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2N4401
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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2N4401/D


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